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| HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS December 2001 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175oC * Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING AVAILABILITY PART NUMBER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-220AB T0-262AA T0-263AB BRAND 20N35GVL 20N35GVL 20N35GVL COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB COLLECTOR (FLANGE) GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. The development type number for this device is TA49076. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 10 26 18 775 150 1.0 -40 to +175 260 6 Collector-Emitter Bkdn Voltage At 10mA, R GE = 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . . IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS o At L = 2.3mH, T C = +175 C . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA. (c)2001 Fairchild Semiconductor Corporation UNITS V V A A V A A mJ W W/oC o C o C KV HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V IC = 10A VGE = 5V VCE = 12V IC = 10A RG = 0 IC = 10mA VCE = 250V VCE = 250V Collector-Emitter Saturation Voltage VCE(SAT) IC = 10A VGE = 4.5V TC = +25oC TC = +25oC MIN 310 320 320 300 315 315 TYP 345 350 355 340 345 350 3.7 MAX 380 380 390 375 375 390 UNITS V V V V V V V Gate Charge QG(ON) - 28.7 - nC Collector-Emitter Clamp Bkdn. Voltage BVCE(CL) TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC 325 360 395 V Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVECS ICES 20 1.3 32 1.3 1.25 1.6 1.9 1.8 5 250 1.6 1.5 2.8 3.5 2.3 V A A V V V V V IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I VGE = 10V IGES = 2mA 10 400 12 - 1.0 17 590 14 15 25 1000 30 k k A V s IC = 10A, RG = 25, L = 550H, RL = 26.4, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 0 TC = +175oC TC = +25oC Inductive Use Test ISCIS 18 26 - - 1.0 o A A C/W Thermal Resistance RJC (c)2001 Fairchild Semiconductor Corporation HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 50 100 VGE=10V 80 7V 6.5V 6.0V 5.5V 5.0V 60 4.5V 40 4.0V 3.5V 20 3.0V 2.5V 0 0 2 4 6 8 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC 40 30 TC = +175oC 20 TC = +25oC TC = -40 C 10 o 0 1 2 3 4 5 6 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE , COLLECTOR EMITTER CURRENT (A) ICE , COLLECTOR EMITTER CURRENT (A) 40 TC = +175oC VGE = 5.0V 50 VGE = 4.5V 40 -40oC +25oC 30 VGE = 4.5V 30 +175oC 20 VGE = 4.0V 10 20 10 0 0 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V) 0 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 1 4 FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE (c)2001 Fairchild Semiconductor Corporation HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) 1.4 VCE(SAT) , SATURATION VOLTAGE (V) 2.2 VCE(SAT) , SATURATION VOLTAGE (V) ICE = 20A 2.1 2.0 1.9 1.8 1.7 1.6 1.5 -25 +25 +75 +125 +175 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) VGE = 4.5V 5.0V VGE = 4.5V VGE = 4.0V ICE = 10A VGE = 4.0V 1.3 VGE = 4.5V 1.2 VGE = 5.0V 1.1 FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 25 VGE = 5.0V 20 PACKAGE LIMITED 15 FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 1.2 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) 10 5 0 +25 +50 +75 +100 +125 +150 +175 TC, CASE TEMPERATURE (oC) FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE (c)2001 Fairchild Semiconductor Corporation VTH, NORMAILZED THRESHOLD VOLTAGE ICE, COLLECTOR-EMITTER CURRENT (A) HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) 105 t(OFF)I, TURN OFF TIME (s) 104 103 102 101 VCES = 250V 100 10-1 +25 +50 +75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE (oC) VECS = 20V 18 VCL= 300V, RGE = 25, VGE = 5V, L= 550H LEAKAGE CURRENT (A) 16 ICE = 6A, RL= 50 14 ICE =10A, RL= 30 12 ICE =15A, RL= 20 10 +25 +50 +75 +100 +125 o +150 +175 TJ , JUNCTION TEMPERATURE ( C) FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE 45 40 35 30 25 20 15 +175oC 10 5 0 2 4 6 8 10 +25oC FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE ICE , COLLECTOR-EMITTER CURRENT (A) VGE = 5V 1200 VGE = 5V 1000 EAS , ENERGY (mJ) +25oC 800 600 400 +175oC 200 0 2 4 6 8 10 INDUCTANCE (mH) INDUCTANCE (mH) FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE (c)2001 Fairchild Semiconductor Corporation HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) 1600 FREQUENCY = 1MHz 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 CRES 0 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 5 25 COES CIES IG REF = 1.022mA, RL = 1.2, TC = +25oC VCE, COLLECTOR-EMITTER VOLTAGE (V) 12 10 VCE = 12V 8 4 3 6 5 VGE, GATE-EMITTER VOLTAGE (V) 6 VCE = 4V 4 VCE = 8V 2 1 0 0 10 20 QG, GATE CHARGE (nC) 30 40 2 0 FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 PD 10-1 0.1 0.05 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t2 t1 BVCER , COLLECTOR-EMITTER BKDN VOLTAGE (V) 350 ICER = 10mA 345 TC = +25oC AND +175oC 340 10-2 10-5 SINGLE PULSE 335 10-3 10-1 101 0 2000 4000 6000 8000 10000 t1 , RECTANGULAR PULSE DURATION (s) RGE , GATE-TO-EMITTER RESISTANCE (V) FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE - EMITTER RESISTANCE (c)2001 Fairchild Semiconductor Corporation HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B Spec Number Test Circuits RL 2.3mH VDD C 1/RG = 1/RGEN + 1/RGE RGEN = 50 10V E RGE = 50 E G DUT + L = 550H C RGEN = 25 5V RG DUT G VCC 300V - FIGURE 17. USE TEST CIRCUIT FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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